PART |
Description |
Maker |
IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
|
International Rectifier, Corp.
|
APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors Sirectifier Global Corp.
|
IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors
|
APT20GF120BRD |
Fast IGBT & FRED 1200V 32A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
APT50GF120JRD |
Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
AOTS40B65H1 |
IGBT Discrete IGBTs
|
Alpha & Omega Semiconductor
|
GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|